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Kingston ValueRam KVR16LN11/4  1.35V (Low Voltage) 4GB DDR3 1600 Desktop Ram View full size

Kingston ValueRam KVR16LN11/4 1.35V (Low Voltage) 4GB DDR3 1600 Desktop Ram

Kingston ValueRam KVR16LN11/4  1.35V (Low Voltage) 4GB DDR3 1600 Desktop Ram

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RAMKS3KVRLN4G01

Availability: This product is currently out of stock

$32.00

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EOL note: These is CLEARANCE Product, limited quantity(normally less than 5), which is available on a first-come, first-serve basis while stock last. The product(s) will vary in condition and might be an Ex-Demo or damaged packaging. If you wish to place a delivery order and wish to check condition of the product beforehand, please email to online@msy.com.au. For instore purchase, please send enquiry email to relevant branch, or check the condition of product over the counter before purchase.

EOL note: These is CLEARANCE Product, limited quantity(normally less than 5), which is available on a first-come, first-serve basis while stock last. The product(s) will vary in condition and might be an Ex-Demo or damaged packaging. If you wish to place a delivery order and wish to check condition of the product beforehand, please email to online@msy.com.au (please include in email which state the delivery is going to). For instore purchase, please send enquiry email to relevant branch, or check the condition of product over the counter before purchase.

DESCRIPTION
This document describes ValueRAM's 512M x 64-bit (4GB)
DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 1Rx8, low
voltage, memory module, based on eight 512M x 8-bit FBGA
components. The SPD is programmed to JEDEC standard
latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This
240-pin DIMM uses gold contact fingers. The electrical and
mechanical specifications are as follows:

FEATURES
• JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~
1.575V) Power Supply
• VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB Height: 0.740” (18.75mm) or 1.180” (30.00mm)

SPECIFICATIONS
CL(IDD) 11 cycles
Row Cycle Time (tRCmin) 48.125ns (min.)
Refresh to Active/Refresh 260ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 35ns (min.)
Maximum Operating Power (1.35V) = TBD W*
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C
*Power will vary depending on the SDRAM.

 

 

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